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DATA SHEET
TEA1201TS 0.95 V starting basic power unit
Product specification 2002 Jun 06
Philips Semiconductors
Product specification
0.95 V starting basic power unit
CONTENTS 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 9 10 11 12 13 13.1 14 15 15.1 15.2 15.3 15.4 15.5 16 17 18 FEATURES APPLICATIONS GENERAL DESCRIPTION ORDERING INFORMATION QUICK REFERENCE DATA BLOCK DIAGRAM PINNING INFORMATION Pinning Pin description FUNCTIONAL DESCRIPTION Control mechanism Synchronous rectification Start-up Undervoltage lockout Shut-down Power switches Temperature protection Current limiters External synchronization and PWM-only mode Behaviour at input voltage exceeding the specified range Control of the additional switch Low battery detector LIMITING VALUES THERMAL CHARACTERISTICS QUALITY SPECIFICATION CHARACTERISTICS APPLICATION INFORMATION External component selection PACKAGE OUTLINE SOLDERING Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods DATA SHEET STATUS DEFINITIONS DISCLAIMERS
TEA1201TS
2002 Jun 06
2
Philips Semiconductors
Product specification
0.95 V starting basic power unit
1 FEATURES 3 GENERAL DESCRIPTION
TEA1201TS
* Complete DC-to-DC converter circuit, one current switch and a battery low detector * Configurable for 1, 2 or 3-cell Nickel-Cadmium (NiCd) or Nickel Metal Hydride (NiMH) batteries and 1 Lithium Ion (Li-Ion) battery * Guaranteed DC-to-DC converter start-up from 1-cell NiCd or NiMH battery, even with a load current * Upconversion or downconversion * Internal power MOSFETs featuring a low RDSon of approximately 0.1 * Synchronous rectification for high efficiency * Soft start * PWM-only operating option * Stand-alone low battery detector requires no additional supply voltage * Low battery detection level at 0.90 V, externally adjustable to a higher level * Adjustable output voltages * Shut-down function * Small outline package * Advanced 0.6 m BICMOS process. 2 APPLICATIONS
The TEA1201TS is a fully integrated battery power unit including a high-efficiency DC-to-DC converter which runs from a 1-cell NiCd or NiMH battery, a current switch and a low battery detector. The circuit can be arranged in several ways to optimize the application circuit of a power supply system. Therefore, the DC-to-DC converter can be arranged for upconversion or downconversion and the low battery detector can be configured for several types of batteries. Accurate low battery detection is possible while all other blocks are switched off. The DC-to-DC converter features efficient, compact and dynamic power conversion using a digital control concept comparable with Pulse Width Modulation (PWM) and Pulse Frequency Modulation (PFM), integrated CMOS power switches with a very low RDSon and fully synchronous rectification. The device operates at a switching frequency of 600 kHz which enables the use of external components with minimum size. The switching frequency can be synchronized to an external high frequency clock signal. Optionally, the device can be kept in PWM control mode only. Deadlock is prevented by an on-chip undervoltage lockout circuit. Active current limiting enables efficient conversion in pulsed-load systems such as Global System for Mobile communication (GSM) and Digital Enhanced Cordless Telecommunications (DECT). The switch can be used to control the connection of (a part of) the output load. It shows a low pin-to-pin resistance of 500 m. The low battery detector has a built-in detection level which is optimum for a 1-cell NiCd or NiMH battery.
* Cellular phones * Cordless phones * Personal Digital Assistants (PDAs) * Portable audio players * Pagers * Mobile equipment.
4
ORDERING INFORMATION TYPE NUMBER TEA1201TS PACKAGE NAME SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT369-1
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
5 QUICK REFERENCE DATA SYMBOL DC-to-DC converter UPCONVERSION VI(up) VO(up) VI(start) VO(uvlo) VI(dwn) VO(dwn) Iq(DCDC) Ishdwn ILX(max) Ilim input voltage output voltage start-up input voltage undervoltage lockout voltage IL < 10 mA VI(start) VO(uvlo) 0.93 2.0 - - 0.96 2.2 - - 110 65 - PARAMETER CONDITIONS MIN. TYP.
TEA1201TS
MAX.
UNIT
5.50 5.50 1.00 2.4
V V V V
DOWNCONVERSION input voltage output voltage VO(uvlo) 1.30 - VLBI1 = VI(up) = 1.2 V Tamb = 80 C Ilim set to 1.0 A upconversion downconversion POWER MOSFETS RDSon(N) RDSon(P) EFFICIENCY efficiency upconversion VO up to 3.3 V; see Fig.9 VI = 1.2 V; IL = 100 mA VI = 2.4 V; IL = 10 mA TIMING fsw fi(sync) tstart Switch RDSon IO(max) drain-to-source resistance in switched-on state maximum output current in switched-on state VO(up) = VI(down) = 5 V; VFB1 < 0.4 V VFB1 < 0.4 V - - 500 - 750 0.40 m A switching frequency synchronization clock input frequency start-up time PWM mode 480 6 - 600 13 10 720 20 - kHz MHz ms - - 84 92 - - % % drain-to-source on-state resistance NFET drain-to-source on-state resistance PFET Tj = 27 C; IDS = 100 mA Tj = 27 C; IDS = -100 mA - - 110 125 200 250 m m -12 -12 - - +12 +12 % % - - 5.50 5.50 - - 1.0 V V A A A
CURRENT LEVELS quiescent current at pin UPOUT/DNIN current in shut-down mode maximum continuous current at pins LX1 and LX2 current limit deviation
General characteristics Vref 2002 Jun 06 reference voltage 1.165 1.190 1.215 V
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handbook, full pagewidth
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Philips Semiconductors
0.95 V starting basic power unit 0.95 V starting basic power unit
BLOCK DIAGRAM
LBI1
9
SHDWN0
LOW BATTERY DETECTOR 10 1 16 P-type POWER FET
TEA1201TS
6 7 OUT1 FB1 UPOUT/DNIN
LBO LX1 LX2
3, 4
sense FET ILIM 5 START-UP CIRCUIT
INTERNAL SUPPLY 8 GND
5 5
sense FET N-type POWER FET Vref CURRENT LIMIT COMPARATOR TEMPERATURE PROTECTION CONTROL LOGIC AND MODE GEARBOX 12 Vref FB0 TIME COUNTER SYNC GATE 14 2 DIGITAL CONTROLLER 15
MGW787
REFERENCE 11 VOLTAGE
Vref
13 MHz OSCILLATOR 13 GND0
SYNC/PWM SHDWN0 U/D
TEA1201TS TEA1201TS
Product specification
Fig.1 Block diagram.
Philips Semiconductors
Product specification
0.95 V starting basic power unit
7 7.1 PINNING INFORMATION Pinning
TEA1201TS
handbook, halfpage
LX1 1 SHDWN0 2 UPOUT/DNIN 3 UPOUT/DNIN 4
16 LX2 15 U/D 14 SYNC/PWM 13 GND0
TEA1201TS
ILIM 5 OUT1 6 FB1 7 GND 8
MGW788
12 FB0 11 Vref 10 LBO 9 LBI1
Fig.2 Pin configuration.
7.2
Pin description SSOP16 package PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 current limiting resistor connection switch output switch control input internal supply ground low battery detector input 1 low battery detector output reference voltage DC-to-DC converter feedback input DC-to-DC converter ground synchronization clock input or PWM-only selection input conversion mode selection input inductor connection 2 inductor connection 1 DC-to-DC converter shut-down input up mode: DC-to-DC converter output; down mode: DC-to-DC converter input DESCRIPTION
Table 1
SYMBOL LX1 SHDWN0 UPOUT/DNIN UPOUT/DNIN ILIM OUT1 FB1 GND LBI1 LBO Vref FB0 GND0 SYNC/PWM U/D LX2
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
8 8.1 FUNCTIONAL DESCRIPTION Control mechanism
TEA1201TS
Figure 4 shows the spread of the output voltage window. The absolute value is mostly dependent on spread, while the actual window size (Vwdw(high) - Vwdw(low)) is not affected. For one specific device, the output voltage will not vary more than 2% (typical value). In low output power situations, the TEA1201TS will switch over to PFM (discontinuous conduction) operating mode. In this mode, regulation information from an earlier PWM operating mode is used. This results in optimum inductor peak current levels in the PFM mode, which are slightly larger than the inductor ripple current in the PWM mode. As a result, the transition between PFM and PWM mode is optimum under all circumstances. In the PFM mode the TEA1201TS regulates the output voltage to the high window limit as shown in Fig.3. 8.2 Synchronous rectification
The TEA1201TS DC-to-DC converter is able to operate in PFM (discontinuous conduction) or PWM (continuous conduction) operating mode. All switching actions are completely determined by a digital control circuit which uses the output voltage level as its control input. This novel digital approach enables the use of a new pulse width and frequency modulation scheme, which ensures optimum power efficiency over the complete range of operation of the converter. When high output power is requested, the device will operate in PWM (continuous conduction) operating mode. This results in minimum AC currents in the circuit components and hence optimum efficiency, minimum costs and low EMC. In this operating mode, the output voltage is allowed to vary between two predefined voltage levels. As long as the output voltage stays within this so-called window, switching continues in a fixed pattern. When the output voltage reaches one of the window borders, the digital controller immediately reacts by adjusting the pulse width and inserting a current step in such a way that the output voltage stays within the window with higher or lower current capability. This approach enables very fast reaction to load variations. Figure 3 shows the response of the converter to a sudden load increase. The upper trace shows the output voltage. The ripple on top of the DC level is a result of the current in the output capacitor, which changes in sign twice per cycle, times the internal Equivalent Series Resistance (ESR) of the capacitor. After each ramp-down of the inductor current, i.e. when the ESR effect increases the output voltage, the converter determines what to do in the next cycle. As soon as more load current is taken from the output the output voltage starts to decay. When the output voltage becomes lower than the low limit of the window, a corrective action is taken by a ramp-up of the inductor current during a much longer time. As a result, the DC current level is increased and normal PWM control can continue. The output voltage (including ESR effect) is again within the predefined window.
For optimum efficiency over the whole load range, synchronous rectifiers inside the TEA1201TS ensure that during the whole second switching phase, all inductor current will flow through the low-ohmic power MOSFETs. Special circuitry is included which detects when the inductor current reaches zero. Following this detection, the digital controller switches off the power MOSFET and proceeds with regulation. 8.3 Start-up
Start-up from low input voltage in the boost mode is realized by an independent start-up oscillator, which starts switching the N-type power MOSFET as soon as the low-battery detector detects a sufficiently high voltage. The inductor current is limited internally to ensure soft-starting. The switch actions of the start-up oscillator will increase the output voltage. As soon as the output voltage is high enough for normal regulation, the digital control system takes control over the power MOSFETs. 8.4 Undervoltage lockout
As a result of too high a load or disconnection of the input power source, the output voltage can drop so low that normal regulation cannot be guaranteed. In this event, the device switches back to start-up mode. If the output voltage drops even further, switching is stopped completely.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
handbook, full pagewidth
load increase Vo
start corrective action high window limit low window limit
time
IL
time
MGK925
Fig.3 Response to load increase.
handbook, full pagewidth
Vwdw(high) 2% +2% Vwdw(low) -2% Vwdw(high) 2% Vwdw(low) typical situation maximum positive spread maximum negative spread
MGW789
Vwdw(high) VO 2% Vwdw(low)
Fig.4 Output voltage window spread.
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
8.5 Shut-down 8.10
TEA1201TS
Behaviour at input voltage exceeding the specified range
When the shut-down input is set HIGH, the DC-to-DC converter disables both switches and power consumption is reduced to a few microamperes. 8.6 Power switches
In general, an input voltage exceeding the specified range is not recommended since instability may occur. There are two exceptions: 1. Upconversion: at an input voltage higher than the target output voltage, but up to 5.5 V, the converter will stop switching and the external Schottky diode will take over. The output voltage will equal the input voltage minus the diode voltage drop. Since all current flows through the external diode in this situation, the current limiting function is not active. In the PWM mode, the P-type power MOSFET is always on when the input voltage exceeds the target output voltage. The internal synchronous rectifier ensures that the inductor current does not fall below zero. As a result, the achieved efficiency is higher in this situation than standard PWM-controlled converters achieve. 2. Downconversion: when the input voltage is lower than the target output voltage, but higher than 2.2 V, the P-type power MOSFET will stay conducting resulting in an output voltage being equal to the input voltage minus some resistive voltage drop. The current limiting function remains active. 8.11 Control of the additional switch
The power switches in the IC are one N-type and one P-type power MOSFET, both having a typical drain-to-source resistance of 100 m. The maximum average current in the power switches is 1.0 A at Tamb = 80 C. 8.7 Temperature protection
When the DC-to-DC converter operates in the PWM mode, and the die temperature gets too high (typical value is 190 C), the converter and the switch stop operating. They resume operation when the die temperature falls below 90 C again. As a result, low frequency cycling between the on and off state will occur. It should be noted that in the event of device temperatures at the cut-off limit, the application differs strongly from maximum specifications. 8.8 Current limiters
If the current in one of the power switches exceeds the programmed limit in the PWM mode, the current ramp is stopped immediately and the next switching phase is entered. Current limiting is required to keep power conversion efficient during temporary high loads. Furthermore, current limiting protects the IC against overload conditions, inductor saturation, etc. The current limiting level is set by an external resistor which must be connected between pin ILIM and ground for downconversion, or between pins ILIM and UPOUT/DNIN for upconversion. 8.9 External synchronization and PWM-only mode
The switch will be in the on-state when its feedback input is connected to ground. When the feedback input is higher than 2 V, the power FET will be high-ohmic. The switch always turns to the high-ohmic state when the shutdown input is made HIGH. 8.12 Low battery detector
The low battery detector is an autonomous circuit which can work at an input voltage down to 0.90 V. It is always on, even when all other blocks are in the shut-down mode. The low battery input (pin LBI1) is tuned to accept a 1-cell NiCd or NiMH battery voltage directly. Hysteresis is included for correct operation. The output of the low battery detector on pin LBO is an open-collector output. The output is high (i.e. no current is sunk by the collector) when the input voltage of the detector is below the lower detection level.
If an external high-frequency clock or a HIGH level is applied to pin SYNC/PWM, the TEA1201TS will use PWM regulation independent of the load applied. In the event of a high-frequency clock being applied, the switching frequency in the PWM mode will be exactly that frequency divided by 22. In the PWM mode the quiescent current of the device increases. In the event that no external synchronization or PWM mode selection is necessary, pin SYNC/PWM must be connected to ground.
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vn Tj Tamb Tstg Ves Notes 1. ESD specification is in accordance with the JEDEC standard: PARAMETER voltage on any pin junction temperature ambient temperature storage temperature electrostatic handling voltage notes 1 and 2 CONDITIONS shut-down mode operating mode MIN. -0.2 -0.2 -40 -20 -40
TEA1201TS
MAX. +6.5 +5.5 +150 +80 +125
UNIT V V C C C V
Class II
a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 k series resistor. b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 H series inductor. 2. Exception is pin ILIM: 1000 V HBM and 100 V MM. 10 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE 143 UNIT K/W
thermal resistance from junction to ambient in free air
11 QUALITY SPECIFICATION In accordance with "SNW-FQ-611D".
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
12 CHARACTERISTICS Tamb = -20 to +80 C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise specified. SYMBOL DC-to-DC converter UPCONVERSION; PIN U/D = LOW VI(up) VO(up) VI(start) VO(uvlo) VI(dwn) VO(dwn) VO(wdw) input voltage output voltage start-up input voltage undervoltage lockout voltage IL < 10 mA note 1 VI(start) VO(uvlo) 0.93 2.0 - - 0.96 2.2 - - 2.0 5.50 5.50 1.00 2.4 V V V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DOWNCONVERSION; PIN U/D = HIGH input voltage output voltage note 2 VO(uvlo) 1.30 5.50 5.50 V V
REGULATION output voltage window size as a function of output voltage PWM mode 1.5 2.5 %
CURRENT LEVELS Iq(DCDC) Ishdwn Ilim(max) Ilim quiescent current at pin UPOUT/DNIN current in shut-down mode maximum current limit current limit deviation Ilim set to 1.0 A; note 4 upconversion downconversion ILX(max) maximum continuous current at pins LX1 and LX2 Tamb = 80 C -12 -12 - - - - +12 +12 1.0 % % A note 3 VLBI1 = VI(up) = 1.2 V - - - 110 65 5 - - - A A A
POWER MOSFETS RDSon(N) RDSon(P) EFFICIENCY efficiency upconversion VO up to 3.3 V; see note 5 and Fig.9 VI = 1.2 V; IL = 100 mA VI = 2.4 V; IL = 10 mA TIMING fsw fi(sync) tstart VlL(n) switching frequency synchronization clock input frequency start-up time note 6 PWM mode 480 6 - 0 600 13 10 - 720 20 - 0.4 kHz MHz ms - - 84 92 - - % % drain-to-source on-state resistance NFET Tj = 27 C; IDS = 100 mA - 110 125 200 250 m m drain-to-source on-state resistance PFET Tj = 27 C; IDS = -100 mA -
DIGITAL INPUT LEVELS LOW-level input voltage on all digital pins V
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
SYMBOL VIH(n)
PARAMETER HIGH-level input voltage on pins SYNC/PWM, SHDWN0 and SHDWN2 all other digital input pins
CONDITIONS note 7
MIN. 0.55V4
TYP. -
MAX.
UNIT
V4 + 0.3 V V4 + 0.3 V 750 0.40 m A
V4 - 0.4 - VO(up) = VI(dwn) = 5 V; VFB1 < 0.4 V VFB1 < 0.4 V - - 500 -
Switch: see Fig.5 RDSon IO(max) drain-to-source resistance in switched-on state maximum output current in switched-on state
Low battery detector ILBD tt(HL) Vdet Vhys TCVdet TCVhys supply current of detector transition time VI = 0.9 V falling Vbat falling Vbat - - 0.87 - - - 20 2 - - 0.93 - - A s V mV mV/K mV/K
DETECTION INPUT PIN LBI1 low battery detection level low battery detection hysteresis temperature coefficient of detection level temperature coefficient of detection hysteresis 0.90 20 0
0.175 -
DETECTION OUTPUT PIN LB0 IO(sink) Vref Iq Tamb Tmax Notes 1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level is measured at pin UPOUT/DNIN. 2. When VI is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain conducting (duty factor is 100%), resulting in VO following VI. 3. The quiescent current is specified as the input current in the upconversion configuration at VI = 1.20 V and VO = 3.30 V, using L1 = 6.8 H, R1 = 150 k and R2 = 91 k. 4. The current limit is defined by resistor R10. This resistor must have a tolerance of 1%. 5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1 and an inductor of 6.8 H with an ESR of 0.05 and a sufficient saturation current level. 6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the output reaches 3.30 V. The output capacitance equals 100 F, the inductance equals 6.8 H and no load is present. 7. V4 is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V4 - 1 V, the quiescent current of the device will increase. output sink current 15 - - A V A C C
General characteristics reference voltage quiescent current at pin UPOUT/DNIN ambient temperature internal temperature for cut-off all blocks operating 1.165 - -20 - 1.190 1.215 270 +25 190 - +80 -
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
handbook, full pagewidth
600
MGU641
RDS(on) m
500
SWITCH
400
300
200
100
0 0.00
1.00
2.00
3.00
4.00
5.00
VI (V)
6.00
Fig.5 Switch drain-to-source on-state resistance as a function of input voltage.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
13 APPLICATION INFORMATION
TEA1201TS
handbook, full pagewidth
TEA1201TS
DC/DC UPCONVERTER SWITCH LOW BATTERY DETECTOR Vout_dcdc Vout_switched low-batt
Equivalent block diagram
D1 L1 LX1 LX2 C1 Vref C5 ILIM UPOUT/DNIN R1 FB0 R2 LBI1 9 C2 R lim Vout_dcdc
1 16
5 4 3
11 12
TEA1201TS
U/D 15 6 low-batt LBO 10 7 14 FB1 switch_on OUT1 Vout_switched
SYNC/PWM
SHDWN0
2 8 13 GND GND0
R7
MGW790
Fig.6 1-cell NiCd or NiMH battery powered equipment.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
handbook, full pagewidth
TEA1201TS
DC/DC UPCONVERTER SWITCH LOW BATTERY DETECTOR Vout_dcdc Vout_switched low-batt
Equivalent block diagram
D1 L1 LX1 LX2 C1 Vref C5 R8 LBI1 R9 9 ILIM UPOUT/DNIN R1 FB0 R2 C2 R lim Vout_dcdc
1 16
5 4 3
11 12
TEA1201TS
U/D 15 6 OUT1 Vout_switched
low-batt
LBO
10 7 14 FB1 switch_on
SYNC/PWM
SHDWN0
2 8 13 GND GND0
R7
MGW791
Fig.7
2-cell NiCd or NiMH battery powered equipment with autonomous shut-down at low battery voltage.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
handbook, full pagewidth
TEA1201TS
DC/DC DOWNCONVERTER SWITCH LOW BATTERY DETECTOR Vout_dcdc Vout_switched low-batt
Equivalent block diagram
UPOUT/DNIN
4 3
1 16
LX1 LX2 D1 R1 C2 L1 Vout_dcdc
C1
R lim
ILIM U/D
5 15 12 FB0
R8 R7 R9 C5 low-batt LBO 10 LBI1 Vref 9 11
R2
TEA1201TS
6 OUT1 Vout_switched
SYNC/PWM
7 14
FB1
switch_on
SHDWN0
2 8 GND 13 GND0
MGW792
Fig.8 3-cell NiCd or NiMH and 1-cell Li-Ion battery powered equipment.
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
13.1 13.1.1 External component selection INDUCTOR L1 13.1.6
TEA1201TS
CURRENT LIMITING RESISTOR R10
The performance of the TEA1201TS is not very sensitive to inductance value. The best efficiency performance over a wide load current range is achieved by using an inductance of 6.8 H for example TDK SLF7032 or Coilcraft DO1608 range. 13.1.2 DC-TO-DC CONVERTER INPUT CAPACITOR C1
The maximum instantaneous current is set by the external resistor R10. The preferred type is SMD with 1% tolerance. The connection of resistor R10 differs for each mode: * At upconversion: resistor R10 must be connected between pins ILIM and UPOUT/DNIN; the current 320 limiting level is defined by: I Iim = ---------R10 * At downconversion: resistor R10 must be connected between pins ILIM and GND0; the current limiting level 300 is defined by: I Iim = ---------R10 The average inductor current during limited current operation also depends on the inductance value, input voltage, output voltage and resistive losses in all components in the power path. Ensure that Ilim < Isat (saturation current) of the inductor. 13.1.7 REFERENCE VOLTAGE DECOUPLING CAPACITOR C5
The value of C1 strongly depends on the type of input source. In general, a 100 F tantalum capacitor is sufficient. 13.1.3 DC-TO-DC CONVERTER OUTPUT CAPACITOR C2
The value and type of C2 depends on the maximum output current and the ripple voltage which is allowed in the application. Low-ESR tantalum capacitors show good results. The most important specification of C2 is its ESR, which mainly determines output voltage ripple. 13.1.4 DIODE D1
The Schottky diode is only used for a short time during takeover from N-type power MOSFET and P-type power MOSFET and vice versa. Therefore, a medium-power diode is sufficient in most applications, for example a Philips PRLL5819. 13.1.5 FEEDBACK RESISTORS R1 AND R2
Optionally, a decoupling capacitor can be connected between pin Vref and ground in order to achieve a lower noise level of the output voltages of the LDO. The best choice for C5 is a ceramic multilayer capacitor of approximately 10 nF. 13.1.8 LOW BATTERY DETECTOR COMPONENTS R7, R8 AND R9
The output voltage of the DC-to-DC converter is determined by the resistors R1 and R2. The following conditions apply: * Use SMD type resistors only with a tolerance of 1%. If larger body resistors are used, the capacitance on pin FB0 will be too large, causing inaccurate operation. * Resistors R1 and R2 should have a maximum value of 50 k when connected in parallel. A higher value will result in inaccurate operation. Under these conditions, the output voltage can be calculated by the formula: R1 V O = V ref x 1 + ------- R2
Resistor R7 is connected between pin LBO and the input or output pin and must be 330 k or higher. A 1-cell NiCd or NiMH battery can be connected directly to pin LBI1. A higher battery voltage can be detected by application of a divider circuit with resistors R8 and R9. The low-battery detection level for a higher battery voltage can be set by using the formula: R9 V LBI1(det) = V det x --------------------- R8 + R9 Since current flows into the LBI1 pin, the parallel impedance of R8 and R9 must be about 1 k in order to avoid inaccuracy due to the spread of the LBI1 current.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
handbook, full pagewidth
100
MGU577
(%)
(1)
(2)
80
60
40 1 10
10 2 IL (mA)
10 3
(1) VI = 2.4 V (2) VI = 1.2 V
VO = 3.5 V
Fig.9 Efficiency as a function of load current.
2002 Jun 06
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
14 PACKAGE OUTLINE SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
TEA1201TS
SOT369-1
D
E
A X
c y HE vM A
Z
16
9
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
8
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0.00 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.25 0.13 D (1) 5.30 5.10 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT369-1 REFERENCES IEC JEDEC MO-152 EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 99-12-27
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
15 SOLDERING 15.1 Introduction to soldering surface mount packages
TEA1201TS
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 15.4 Manual soldering
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 15.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. 15.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
15.5 Suitability of surface mount IC packages for wave and reflow soldering methods
TEA1201TS
SOLDERING METHOD PACKAGE WAVE BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
16 DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
TEA1201TS
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 17 DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18 DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors
Product specification
0.95 V starting basic power unit
NOTES
TEA1201TS
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403502/01/pp24
Date of release: 2002
Jun 06
Document order number:
9397 750 09359

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